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Oxidation of Silicon

Vladimir Aleksandrovich Arslambekov 1
Vladimir Aleksandrovich Arslambekov
, 
Irina Dmitrievna Kazarinova 1
Irina Dmitrievna Kazarinova
, 
Kseniya Mikhailovna Gorbunova 1
Kseniya Mikhailovna Gorbunova
1 Institute of Physical Chemistry, the USSR Academy of Sciences, Moscow
10.1070/RC1972v041n01ABEH002027
Published 30 November 1971
Communication , Volume 41, Issue 1, 36-46
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Arslambekov V. A., Kazarinova I. D., Gorbunova K. M. Oxidation of Silicon // Russian Chemical Reviews. 1972. Vol. 41. No. 1. pp. 36-46.
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Arslambekov V. A., Kazarinova I. D., Gorbunova K. M. Oxidation of Silicon // Russian Chemical Reviews. 1972. Vol. 41. No. 1. pp. 36-46.
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TY - JOUR
DO - 10.1070/RC1972v041n01ABEH002027
UR - https://rcr.colab.ws/publications/10.1070/RC1972v041n01ABEH002027
TI - Oxidation of Silicon
T2 - Russian Chemical Reviews
AU - Arslambekov, Vladimir Aleksandrovich
AU - Kazarinova, Irina Dmitrievna
AU - Gorbunova, Kseniya Mikhailovna
PY - 1972
DA - 1971/11/30
PB - ANO Editorial Board of the journal Uspekhi Khimii
SP - 36-46
IS - 1
VL - 41
ER -
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@article{1972_Arslambekov,
author = {Vladimir Aleksandrovich Arslambekov and Irina Dmitrievna Kazarinova and Kseniya Mikhailovna Gorbunova},
title = {Oxidation of Silicon},
journal = {Russian Chemical Reviews},
year = {1972},
volume = {41},
publisher = {ANO Editorial Board of the journal Uspekhi Khimii},
month = {Nov},
url = {https://rcr.colab.ws/publications/10.1070/RC1972v041n01ABEH002027},
number = {1},
pages = {36--46},
doi = {10.1070/RC1972v041n01ABEH002027}
}
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Arslambekov, Vladimir Aleksandrovich, et al. “Oxidation of Silicon.” Russian Chemical Reviews, vol. 41, no. 1, Nov. 1972, pp. 36-46. https://rcr.colab.ws/publications/10.1070/RC1972v041n01ABEH002027.
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Abstract

Work on the oxidation of silicon in various gaseous media has been reviewed. Particular attention has been paid to the mechanism of formation and the kinetics of the growth of oxide films on silicon during high-temperature oxidation. Published data on the composition and structure of the resulting film of reaction products, the dependence of the rate of oxidation on the pressure of the oxidising medium, and the possible participation of silicon ions in the growth of the oxide film have been discussed.
The bibliography contains 120 references.