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Mechanism of the Action of an Electron Beam on Organic Photoresists

Stepan Arkhipovich Neustroev 1
Stepan Arkhipovich Neustroev
, 
Evgenii Borisovich Sokolov 1
Evgenii Borisovich Sokolov
1 Moscow Electronic Engineering Institute
Published 30 November 1971
Communication , Volume 41, Issue 9, 795-806
2
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Neustroev S. A., Sokolov E. B. Mechanism of the Action of an Electron Beam on Organic Photoresists // Russian Chemical Reviews. 1972. Vol. 41. No. 9. pp. 795-806.
GOST all authors (up to 50)
Neustroev S. A., Sokolov E. B. Mechanism of the Action of an Electron Beam on Organic Photoresists // Russian Chemical Reviews. 1972. Vol. 41. No. 9. pp. 795-806.
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TY - JOUR
DO - 10.1070/RC1972v041n09ABEH002094
UR - https://rcr.colab.ws/publications/10.1070/RC1972v041n09ABEH002094
TI - Mechanism of the Action of an Electron Beam on Organic Photoresists
T2 - Russian Chemical Reviews
AU - Neustroev, Stepan Arkhipovich
AU - Sokolov, Evgenii Borisovich
PY - 1972
DA - 1971/11/30
PB - ANO Editorial Board of the journal Uspekhi Khimii
SP - 795-806
IS - 9
VL - 41
ER -
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@article{1972_Neustroev,
author = {Stepan Arkhipovich Neustroev and Evgenii Borisovich Sokolov},
title = {Mechanism of the Action of an Electron Beam on Organic Photoresists},
journal = {Russian Chemical Reviews},
year = {1972},
volume = {41},
publisher = {ANO Editorial Board of the journal Uspekhi Khimii},
month = {Nov},
url = {https://rcr.colab.ws/publications/10.1070/RC1972v041n09ABEH002094},
number = {9},
pages = {795--806},
doi = {10.1070/RC1972v041n09ABEH002094}
}
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Neustroev, Stepan Arkhipovich, and Evgenii Borisovich Sokolov. “Mechanism of the Action of an Electron Beam on Organic Photoresists.” Russian Chemical Reviews, vol. 41, no. 9, Nov. 1972, pp. 795-806. https://rcr.colab.ws/publications/10.1070/RC1972v041n09ABEH002094.
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Abstract

The literature dealing with the decomposition of positive and negative photoresists by actinic light and by electron bombardment is reviewed, and the action of a stream of electrons on other organic materials, metals, and inorganic dielectrics is discussed. A mechanism producing internal irradiation of the resist is considered: the incident electrons excite the resist molecules into fluorescence and phosphorescence.
The influence of the (metallic or dielectric) substrate on the achievement of the required line widths is discussed. It is shown that the cross-linking of a negative photoresist under the influence of an electron beam occurs by free-radical polymerisation.
65 references.