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The Technology, Structure, and Properties of Organosilicon Dielectrics-polyorganosilasesquioxanes

A M Ton'shin 1
A M Ton'shin
, 
Boris Aleksandrovich Kamaritskii 2
Boris Aleksandrovich Kamaritskii
, 
Valerii Naumovich Spektor 2
Valerii Naumovich Spektor
1 Moscow State (V. I. Lenin) Pedagogical Institute
2 Institute of Chemical Physics of the USSR Academy of Sciences, Moscow
10.1070/RC1983v052n08ABEH002883
Published 30 November 1982
Communication , Volume 52, Issue 8, 775-803
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Ton'shin A. M., Kamaritskii B. A., Spektor V. N. The Technology, Structure, and Properties of Organosilicon Dielectrics-polyorganosilasesquioxanes // Russian Chemical Reviews. 1983. Vol. 52. No. 8. pp. 775-803.
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Ton'shin A. M., Kamaritskii B. A., Spektor V. N. The Technology, Structure, and Properties of Organosilicon Dielectrics-polyorganosilasesquioxanes // Russian Chemical Reviews. 1983. Vol. 52. No. 8. pp. 775-803.
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TY - JOUR
DO - 10.1070/RC1983v052n08ABEH002883
UR - https://rcr.colab.ws/publications/10.1070/RC1983v052n08ABEH002883
TI - The Technology, Structure, and Properties of Organosilicon Dielectrics-polyorganosilasesquioxanes
T2 - Russian Chemical Reviews
AU - Ton'shin, A M
AU - Kamaritskii, Boris Aleksandrovich
AU - Spektor, Valerii Naumovich
PY - 1983
DA - 1982/11/30
PB - ANO Editorial Board of the journal Uspekhi Khimii
SP - 775-803
IS - 8
VL - 52
ER -
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@article{1983_Ton'shin,
author = {A M Ton'shin and Boris Aleksandrovich Kamaritskii and Valerii Naumovich Spektor},
title = {The Technology, Structure, and Properties of Organosilicon Dielectrics-polyorganosilasesquioxanes},
journal = {Russian Chemical Reviews},
year = {1983},
volume = {52},
publisher = {ANO Editorial Board of the journal Uspekhi Khimii},
month = {Nov},
url = {https://rcr.colab.ws/publications/10.1070/RC1983v052n08ABEH002883},
number = {8},
pages = {775--803},
doi = {10.1070/RC1983v052n08ABEH002883}
}
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Ton'shin, A. M., et al. “The Technology, Structure, and Properties of Organosilicon Dielectrics-polyorganosilasesquioxanes.” Russian Chemical Reviews, vol. 52, no. 8, Nov. 1983, pp. 775-803. https://rcr.colab.ws/publications/10.1070/RC1983v052n08ABEH002883.
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Abstract

The available information about the technology of the preparation of polyorganosilasesquioxanes, their structure, and properties is described systematically, surveyed, and compared with that on inorganic oxide dielectrics. The possibilities and advantages of their application as dielectric materials in semiconductor electronics are examined; analysis of the experimental literature data has led to the conclusion that the method of preparation has a decisive influence on the mechanism of the formation of oligomer molecules their conversion into polymers, and their interaction with various supports.
The bibliography includes 281 references.