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Chemical vapour-phase deposition of ruthenium-containing thin films

Vladislav Yur'evich Vasilev 1, 2
Vladislav Yur'evich Vasilev
, 
Natal'ya Borisovna Morozova 3
Natal'ya Borisovna Morozova
, 
Igor Konstantinovich Igumenov 3
Igor Konstantinovich Igumenov
1 Novosibirsk State Technical University
2 'SibIS', Limited Liability Company, Novosibirsk, Russia
3 Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
Published 30 November 2013
Communication , Volume 83, Issue 8, 758-782
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Vasilev V. Y., Morozova N. B., Igumenov I. K. Chemical vapour-phase deposition of ruthenium-containing thin films // Russian Chemical Reviews. 2014. Vol. 83. No. 8. pp. 758-782.
GOST all authors (up to 50)
Vasilev V. Y., Morozova N. B., Igumenov I. K. Chemical vapour-phase deposition of ruthenium-containing thin films // Russian Chemical Reviews. 2014. Vol. 83. No. 8. pp. 758-782.
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TY - JOUR
DO - 10.1070/RC2014v083n08ABEH004402
UR - https://rcr.colab.ws/publications/10.1070/RC2014v083n08ABEH004402
TI - Chemical vapour-phase deposition of ruthenium-containing thin films
T2 - Russian Chemical Reviews
AU - Vasilev, Vladislav Yur'evich
AU - Morozova, Natal'ya Borisovna
AU - Igumenov, Igor Konstantinovich
PY - 2014
DA - 2013/11/30
PB - ANO Editorial Board of the journal Uspekhi Khimii
SP - 758-782
IS - 8
VL - 83
ER -
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@article{2014_Vasilev,
author = {Vladislav Yur'evich Vasilev and Natal'ya Borisovna Morozova and Igor Konstantinovich Igumenov},
title = {Chemical vapour-phase deposition of ruthenium-containing thin films},
journal = {Russian Chemical Reviews},
year = {2014},
volume = {83},
publisher = {ANO Editorial Board of the journal Uspekhi Khimii},
month = {Nov},
url = {https://rcr.colab.ws/publications/10.1070/RC2014v083n08ABEH004402},
number = {8},
pages = {758--782},
doi = {10.1070/RC2014v083n08ABEH004402}
}
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Vasilev, Vladislav Yur'evich, et al. “Chemical vapour-phase deposition of ruthenium-containing thin films.” Russian Chemical Reviews, vol. 83, no. 8, Nov. 2014, pp. 758-782. https://rcr.colab.ws/publications/10.1070/RC2014v083n08ABEH004402.
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Abstract

Chemical and materials science aspects of formation of ruthenium-containing thin films for modern high-precision technologies by chemical vapour deposition (CVD) methods are considered. Chemical approaches to the synthesis of main precursors used in MOCVD techniques, layer growth processes as well as main physicochemical and electrical properties of ruthenium-containing thin films are analyzed.

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