Home / Articles / The chemistry of the compound semiconductor-intrinsic insulator interface

The chemistry of the compound semiconductor-intrinsic insulator interface

Nikolai Nikolaevich Berchenko 1
Nikolai Nikolaevich Berchenko
, 
Yu V Medvedev 1
Yu V Medvedev
1 State University "L'vovskaya Politekhnika"
10.1070/RC1994v063n08ABEH000108
Published 30 November 1993
Communication , Volume 63, Issue 8, 623-639
15
Share
Cite this
GOST
 | 
Cite this
GOST
Copy cite
Berchenko N. N., Medvedev Yu. V. The chemistry of the compound semiconductor-intrinsic insulator interface // Russian Chemical Reviews. 1994. Vol. 63. No. 8. pp. 623-639.
GOST all authors (up to 50)
Copy cite
Berchenko N. N., Medvedev Yu. V. The chemistry of the compound semiconductor-intrinsic insulator interface // Russian Chemical Reviews. 1994. Vol. 63. No. 8. pp. 623-639.
RIS
 | 
Cite this
RIS
Copy cite
TY - JOUR
DO - 10.1070/RC1994v063n08ABEH000108
UR - https://rcr.colab.ws/publications/10.1070/RC1994v063n08ABEH000108
TI - The chemistry of the compound semiconductor-intrinsic insulator interface
T2 - Russian Chemical Reviews
AU - Berchenko, Nikolai Nikolaevich
AU - Medvedev, Yu V
PY - 1994
DA - 1993/11/30
PB - ANO Editorial Board of the journal Uspekhi Khimii
SP - 623-639
IS - 8
VL - 63
ER -
BibTex
 | 
Cite this
BibTex (up to 50 authors)
Copy cite
@article{1994_Berchenko,
author = {Nikolai Nikolaevich Berchenko and Yu V Medvedev},
title = {The chemistry of the compound semiconductor-intrinsic insulator interface},
journal = {Russian Chemical Reviews},
year = {1994},
volume = {63},
publisher = {ANO Editorial Board of the journal Uspekhi Khimii},
month = {Nov},
url = {https://rcr.colab.ws/publications/10.1070/RC1994v063n08ABEH000108},
number = {8},
pages = {623--639},
doi = {10.1070/RC1994v063n08ABEH000108}
}
MLA
Cite this
MLA
Copy cite
Berchenko, Nikolai Nikolaevich, and Yu V Medvedev. “The chemistry of the compound semiconductor-intrinsic insulator interface.” Russian Chemical Reviews, vol. 63, no. 8, Nov. 1994, pp. 623-639. https://rcr.colab.ws/publications/10.1070/RC1994v063n08ABEH000108.
Views / Visits / Downloads
18 / 18 / 3

Abstract

Processes leading to the growth of intrinsic insulators (oxides, sulfides, and fluorides) on the surfaces of semiconductors of the III–V, II–VI, and IV–VI groups as well as their solid solutions are analysed with the aid of classical thermodynamics. Their phase compositions, found from the equilibrium phase diagram, are compared with the compositions found as a result of experimental studies of the semiconductor-insulator interface. It is shown that there is a relation between the characteristic features of the equilibrium phase diagram (in particular the segregation of a metal or nonmetal at the interface), the type of intrinsic lattice defects, and the electrophisical properties of the interface. The possible ways of creating an ideal compound semiconductor-insulator interface are considered. The bibliography includes 171 references.

References

1.
1
A. A. Krasnovskii
Dokl. Akad. Nauk SSSR , 1948
2.
Do we need a new methodology for GaAs passivation?
Green A.M., Spicer W.E.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 1993
3.
Thin film compound phase formation sequence: An effective heat of formation model
Pretorius R., Marais T.K., Theron C.C.
Materials Science Reports , 1993
5.
Phase composition of thin oxide films on InSb
Smirnova T.P., Golubenko A.N., Zacharchuk N.F., Belyi V.I., Kokovin G.A., Valisheva N.A.
Thin Solid Films , 1981
6.
Passivation of mercury cadmium telluride surfaces
Nemirovsky Y., Bahir G.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 1989
7.
7
E. Rabinowitch
"Photosynthesis" , 1956
8.
8
V. N. Kondrat'ev
"Kinetika Reaktsii v Gazovoi Faze" (Kinetics of Reactions in the Gas Phase) , 1959
9.
9
V. H. Lynch
Carnegie Inst. Year Book , 1954
10.
10
T. A. Kryukova
"Polyaro-graficheskii Analiz" (Polarographic Analysis) , 1959
12.
Solid‐state quaternary phase equilibrium diagram for the Hg–Cd–Te–O system
Rhiger D.R., Kvaas R.E.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 1983
13.
13
V. B. Evstigneev
Dokl. Akad. Nauk SSSR , 1954
14.
14
V. B. Evstigneev
Zhur. Fiz. Khim. , 1958
16.
16
A. A. Krasnovskii
Dokl. Akad. Nauk SSSR , 1949
17.
17
V. B. Evstigneev
Dokl. Akad. Nauk SSSR , 1958
18.
Compound formation in the mercury-cadmium-tellurium-oxygen system
Brandt G., Moritz R.
Materials Research Bulletin , 1985
19.
Effect of cleanings on the composition of HgCdTe surfaces
Seelmann-Eggebert M.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena , 1992
20.
Thermal oxidation and native oxide-substrate reactions on InAs and InxGa1−xAs
Schwartz G.P., Griffiths J.E., Gualtieri G.J.
Thin Solid Films , 1982
21.
21
A. A. Krasnovskii
Dokl. Akad. Nauk SSSR , 1958
22.
22
A. A. Krasnovskii
Dokl. Akad. Nauk SSSR , 1958
23.
Étude du diagramme des phases condensées du système In-P-S
Gendry M., Durand J., Villeneuve J.M., Cot L.
Thin Solid Films , 1986
24.
Thermodynamic stability of GaAs sulfur passivation
Medvedev Y.V.
Applied Physics Letters , 1994
25.
Properties of Hg1−xCdxTe native oxide interfaces
Helms C.R.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 1990
26.
26
B. Ya. Dain
1957
27.
On the nature of oxides on InP surfaces
Hollinger G., Bergignat E., Joseph J., Robach Y.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 1985
28.
The Study of Native Oxide on Chemically Etched GaAs (100) Surfaces
Yoon H.J., Choi M.H., Park I.S.
Journal of the Electrochemical Society , 1992
29.
29
A. A. Krasnovskii
Dokl. Akad. Nauk SSSR , 1951
30.
Photoemission studies of the interaction of oxygen with GaAs(110)
Su C.Y., Lindau I., Chye P.W., Skeath P.R., Spicer W.E.
Physical Review B , 1982
32.
Early stages in the formation of the oxide-InP(110) interface
Hollinger G., Hughes G., Himpsel F.J., Jordan J.L., Morar J.F., Houzay F.
Surface Science , 1986
34.
Growth structure of chemisorbed oxygen on GaAs(110) and InP(110) surfaces
Bertness K.A., Yeh J.-., Friedman D.J., Mahowald P.H., Wahi A.K., Kendelewicz T., Lindau I., Spicer W.E.
Physical Review B , 1988
35.
O 1s studies of the oxidation of InP(110) and GaAs(110) surfaces
Hughes G.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena , 1986
36.
Photoemission studies of the initial stages of oxidation of GaSb and InP
Chye P.W., Su C.Y., Lindau I., Garner C.M., Pianetta P., Spicer W.E.
Surface Science , 1979
37.
Oxygen adsorption on the indium antimonide (110) surface
Bermudez V.M., Ritz V.H.
Physical Review B , 1982
38.
X-Ray Photoelectron Spectroscopic Analysis of the Oxide of GaAs
Toshifumi Ishikawa T.I., Hideaki Ikoma H.I.
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes , 1992
39.
X-Ray Photoelectron Spectroscopic Study of Oxidation of InP
Noboru Shibata N.S., Hideaki Ikoma H.I.
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes , 1992
41.
41
A. A. Krasnovskii
Dokl. Akad. Nauk SSSR , 1950
43.
43
N. Bunge
Ber. Deutsch. Chem. Ges. , 1870
44.
44
V. B. Evstigneev
Dokl. Akad. Nauk SSSR , 1953
45.
45
W. Hendrich
Roczniki Chemii , 1958
46.
Initial stages of anodic oxidation of GaAs
Makky W.H., Cabrera F., Geib K.M., Wilmsen C.W.
Journal of Vacuum Science and Technology , 1982
47.
47
G. Oster
"Research in Photosynthesis" , 1957
48.
48
A. A. Krasnovskii
Dokl. Akad. Nauk SSSR , 1955
51.
A study of thermal oxide-InP interaces
Bergignat E., Hollinger G., Robach Y.
Surface Science , 1987
52.
52
V. B. Evstigneev
Dokl. Akad. Nauk SSSR , 1957
53.
Thermal oxidation of InP and properties of oxide film
Yamaguchi M., Ando K.
Journal of Applied Physics , 1980
54.
High pressure thermal oxide/InP interface
Wilmsen C.W.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena , 1985
55.
On the chemistry of passivated oxide–InP interfaces
Hollinger G.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena , 1987
56.
Passivation of InP using In(PO3)3‐condensed phosphates: From oxide growth properties to metal‐insulator‐semiconductor field‐effect‐transistor devices
Robach Y., Besland M.P., Joseph J., Hollinger G., Viktorovitch P., Ferret P., Pitaval M., Falcou A., Post G.
Journal of Applied Physics , 1992
57.
Anodic Oxidation of GaAs in Mixed Solutions of Glycol and Water
Hasegawa H., Hartnagel H.L.
Journal of the Electrochemical Society , 1976
58.
Composition of anodic oxides grown on InP
Salvi M., Favennec P.N., L'Haridon H., Pelous G.P.
Thin Solid Films , 1982
59.
In Situ Studies of the Anodic Oxidation of Indium Phosphide
Besland M.P., Robach Y., Joseph J.
Journal of the Electrochemical Society , 1993
60.
Electronic structure of semiconductor oxides:InPO4, In(PO3)3,P2O5,SiO2,AlPO4, and Al(PO3)3
Sferco S.J., Allan G., Lefebvre I., Lannoo M., Bergignat E., Hollinger G.
Physical Review B , 1990
61.
62
A. A. Krasnovskii
"Sbornik, Voprosy Khimicheskoi Kinetiki" (Symposium, Problems of Chemical Kinetics) , 1955
62.
Thermal oxidation of InAsxP1−x
Schwartz G.P., Thiel F.A., Gualtieri G.J.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 1984
64.
Comparative study of activated oxygen uptake on HgTe, Hg0.69Cd0.31Te, and CdTe
Silberman J.A., Laser D., Lindau I., Spicer W.E., Wilson J.A.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 1985
65.
Relation between the electronic states and structural properties of Hg1−xCdxTe
Chen A.‐., Sher A., Spicer W.E.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 1983
66.
Kinetics and oxide composition for thermal oxidation of cadmium telluride
Wang F., Schwartzman A., Fahrenbruch A.L., Sinclair R., Bube R.H., Stahle C.M.
Journal of Applied Physics , 1987
68.
69
B. Commoner
1958
69.
70
N. Bubnov
Biofizika , 1960
70.
Growth mechanisms of anodic oxide and sulfide films on HgCdTe
Strong R.L.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 1987
71.
Thermal stability of the anodic oxide/Hg1−xCdxTe interface
Stahle C.M.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena , 1987
72.
Physical and chemical properties of the anodic oxide/HgCdTe interface
Stahle C.M., Helms C.R., Schaake H.F., Strong R.L., Simmons A., Pallix J.B., Becker C.H.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 1989
73.
75
V. B. Evstigneev
Dokl. Akad. Nauk SSSR , 1950
75.
77
A. A. Krasnovskii
Dokl. Akad. Nauk SSSR , 1948
76.
The interface of plasma‐anodized Hg1−xCdxTe
Nemirovsky Y., Goshen R., Kidron I.
Journal of Applied Physics , 1982
77.
Passivation of Hg1−xCdxTe by photochemical native oxidation: Growth characteristics
Winton G.H., Prasad K., Faraone L., Hotchkis M.A.
Journal of Electronic Materials , 1993
78.
80
N. N. Mel'nikov
Zhur. Obshch. Khim. , 1937
79.
81
J. C. Ghosh
J. Indian Chem. Soc. , 1934
80.
82
G. P. Brin
Biokhimiya , 1957
81.
83
A. A. Krasnovskii
Dokl. Akad. Nauk SSSR , 1947
82.
84
A. A. Krasnovskii
Dokl. Akad. Nauk SSSR , 1947
83.
85
A. A. Krasnovskii
Dokl. Akad. Nauk SSSR , 1947
84.
86
V. B. Evstigneev
Dokl. Akad. Nauk SSSR , 1958
85.
87
J. F. Arens
"Advances in Organic Chemistry" , 1960
86.
88
A. A. Krasnovskii
Dokl. Akad. Nauk SSSR , 1946
87.
Anodic sulfide films on Hg1−xCdxTe
Nemirovsky Y., Burstein L.
Applied Physics Letters , 1984
88.
The characterization of anodic fluoride films on Hg1−xCdxTe and their interfaces
Weiss E., Mainzer N.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 1988
89.
Characterization of anodic sulfide films on Hg0.78Cd0.22Te
Strong R.L., Luttmer J.D., Little D.D., Teherani T.H., Helms C.R.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 1987
90.
Thermal instability of anodic sulfide films on Hg1−xCdxTe
Ma Z., Li R.
Applied Physics Letters , 1990
92.
Properties of anodic fluoride films on Hg1−xCdtxTe
Esquivias I., Brink D., Dal Colle M., Baars J., Bruder M.
Materials Science and Engineering B: Solid-State Materials for Advanced Technology , 1991
93.
Chemical effects of annealing ZnS capped anodic fluoride films on Hg1−xCdxTe (x∼0.2)
Weiss E., Helms C.R.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 1991
97.
(Invited) GaAs MIS Structures–Hopeless or Promising?
Gatos H.C., Lagowski J., Kazior T.E.
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes , 1983
98.
Preface
Wieder H.H., Wilmsen C.W.
Thin Solid Films , 1979
100.
Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States
Spicer W.E., Lindau I., Skeath P., Su C.Y., Chye P.
Physical Review Letters , 1980
101.
EL2 in GaAs: Present Status
Baraff G.A.
Acta Physica Polonica A , 1992
102.
104
O. P. Osipova
Dokl. Akad. Nauk SSSR , 1950
103.
The advanced unified defect model for Schottky barrier formation
Spicer W.E.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena , 1988
105.
Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces
Hasegawa H.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena , 1986
106.
Time dependence of the surface Fermi level of GaAs in atmosphere
Ohbu I., Takahama M., Mizuta H.
Applied Physics Letters , 1993
107.
Role of excess As in low-temperature-grown GaAs
Warren A.C., Woodall J.M., Kirchner P.D., Yin X., Pollak F., Melloch M.R., Otsuka N., Mahalingam K.
Physical Review B , 1992
108.
Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
Warren A.C., Woodall J.M., Freeouf J.L., Grischkowsky D., McInturff D.T., Melloch M.R., Otsuka N.
Applied Physics Letters , 1990
109.
A New Type of Semi-Insulating Materials
Leon R.P., Weber E.R.
Acta Physica Polonica A , 1992
110.
Unpinning of the Fermi level on GaAs by flowing water
Ives N.A., Stupian G.W., Leung M.S.
Applied Physics Letters , 1987
111.
Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
Sandroff C.J., Nottenburg R.N., Bischoff J.‐., Bhat R.
Applied Physics Letters , 1987
112.
Nearly ideal electronic properties of sulfide coated GaAs surfaces
Yablonovitch E., Sandroff C.J., Bhat R., Gmitter T.
Applied Physics Letters , 1987
113.
Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces
Yablonovitch E., Skromme B.J., Bhat R., Harbison J.P., Gmitter T.J.
Applied Physics Letters , 1989
114.
Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment
Callegari A., Hoh P.D., Buchanan D.A., Lacey D.
Applied Physics Letters , 1989
115.
A novel passivation technique of GaAs power MESFETs
Taniguchi M., Murakawa T., Kajitani Y.
Applied Surface Science , 1992
116.
Improvement of interface electronic properties of GaF3/GaAs MIS structures
Ricard H., Aizawa K., Ishiwara H.
Applied Surface Science , 1992
117.
Thermal effects on the growth of SiO2 on GaAs(100) by reduction of native oxides
Jiménez I., Palomares F.J., Avila J., Cuberes M.T., Soria F., Sacedón J.L., Horn K.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 1993
118.
Mechanism of oxide film growth on GaAs by plasma anodization
Yamasaki K., Sugano T.
Journal of Vacuum Science and Technology , 1980
119.
Native oxide formation and electrical instabilities at the insulator/InP interface
Wager J.F.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena , 1983
120.
122
S. R. Rafikov
Izv. Akad. Nauk SSSR, Otd. Khim. Nauk , 1953
121.
Fermi-level pinning on ideally terminated InP(110) surfaces
Yamada M., Wahi A.K., Kendelewicz T., Spicer W.E.
Physical Review B , 1992
122.
124
V. V. Levchenko
Zhur. Obshch. Khim. , 1952
124.
126
J. Wiemannand Ch. Clachet
Compt. rend. , 1948
125.
127
R. Pasternak
Helv. Chim. Acta , 1948
126.
Electron cyclotron resonance plasma process for InP passivation
Hu Y.Z., Li M., Wang Y., Irene E.A., Rowe M., Casey H.C.
Applied Physics Letters , 1993
127.
MOS Capacitors on Cadmium Telluride
Talasek R.T., Syllaios A.J.
Journal of the Electrochemical Society , 1985
129.
131
N. Thooi
Compt. rend. , 1958
130.
Surface charge transport in PbSxSe1−x and Pb1−ySnySe epitaxial films
Jensen J.D., Schoolar R.B.
Journal of Vacuum Science and Technology , 1976
132.
134
V. V. Korshak
Izv. Akad. Nauk SSSR, Otd. Khim. Nauk , 1948
133.
135
V. V. Korshak
Dokl. Akad. Nauk SSSR , 1945
134.
136
V. V. Korshak
Izv. Akad. Nauk SSSR, Otd. Khim. Nauk , 1954
135.
137
S. R. Rafikov
Zh. Obshch. Khim. , 1944
136.
Hg0.8Cd0.2Te native defects: Densities and dopant properties
Berding M.A., Van Schilfgaarde M., Sher A.
Journal of Electronic Materials , 1993
137.
Investigation of mercury interstitials in Hg1−xCdxTe alloys using resonant impact-ionization spectroscopy
Littler C.L.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena , 1992
138.
Electrical properties of the anodic oxide-HgZnTe interface
Esquivias I., Baars J., Brink D., Eger D.
Semiconductor Science and Technology , 1993
139.
Interface properties of passivated HgZnTe
Khelladi K.H., Lemoine D., Rolland S., Granger R., Triboulet R.
Semiconductor Science and Technology , 1993
140.
Effects influencing the structural integrity of semiconductors and their alloys
Sher A., Chen A., Spicer W.E., Shih C.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 1985
141.
143
Friedl.
142.
Properties of insulator interfaces with p‐HgCdTe
Schacham S.E., Finkman E.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 1990
143.
Dielectric/semiconductor interfaces
Wieder H.H.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena , 1993
144.
146
V. V. Korshak
Dokl. Akad. Nauk SSSR , 1952
146.
Electronic passivation ofn‐ andp‐type GaAs using chemical vapor deposited GaS
Tabib‐Azar M., Kang S., MacInnes A.N., Power M.B., Barron A.R., Jenkins P.P., Hepp A.F.
Applied Physics Letters , 1993
147.
Electrical measurements onn+‐GaAs‐undoped Ga0.6Al0.4As‐n‐GaAs capacitors
Solomon P.M., Hickmott T.W., Morkoç H., Fischer R.
Applied Physics Letters , 1983
148.
Surface and interface structures of S‐passivated GaAs(111) studied by soft x‐ray standing waves
Sugiyama M., Maeyama S., Oshima M., Oigawa H., Nannichi Y., Hashizume H.
Applied Physics Letters , 1992
150.
Electronic and geometric structure of clean InP(001) and of the CaF2/InP(001) interface
Weiss W.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena , 1990
152.
Preparation electrical properties and interface studies of plasma nitride layers onn‐type InP
Astito A., Foucaran A., Bastide G., Rouzeyre M., Leclercq J.L., Durand J.
Journal of Applied Physics , 1991
153.
Plasma enhanced chemical vapor deposition and characterization of boron nitride gate insulators on InP
Bath A., van der Put P.J., Becht J.G., Schoonman J., Lepley B.
Journal of Applied Physics , 1991
155.
Growth of passivating UV/ozone oxides on InP
Besland M.-., Louis P., Robach Y., Joseph J., Hollinger G., Gallet D., Viktorovitch P.
Applied Surface Science , 1992
157.
159
J. Tafel
Z. Elektrochem. , 1911
158.
Key issues in HgCdTe-based focal plane arrays: An industry perspective
Tennant W.E.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena , 1992
159.
Tunneling and 1/f noise currents in HgCdTe photodiodes
Nemirovsky Y.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena , 1992
160.
Application of CdTe epitaxial layers for passivation ofp‐type Hg0.77Cd0.23Te
Sarusi G., Cinader G., Zemel A., Eger D., Shapira Y.
Journal of Applied Physics , 1992
161.
Surface passivation of HgCdTe photodiodes
Zimmermann P.H., Reine M.B., Spignese K., Maschhoff K., Schirripa J.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 1990
162.
Long wavelength HgMnTe avalanche photodiodes
Becla P.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena , 1992
163.
Electrochemical approaches to cleaning, reconstruction, passivation, and characterization of the HgCdTe surface
Menezes S.
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena , 1991
164.
In situ ellipsometry studies of electrodeposited cadmium telluride films on cadmium mercury telluride
Fisher J.M., Berlouis L.E., Rospendowski B.N., Hall P.J., Astles M.G.
Semiconductor Science and Technology , 1993
165.
Passivation of Mercury Cadmium Telluride Surfaces via Electrochemical Generation of a Zinc Telluride Layer
Wei C., Rajeshwar K., Luttmer J.D.
Journal of the Electrochemical Society , 1993
166.
168
1918
167.
169
Friedl.
168.
170
1918
169.
Planar native‐oxide AlxGa1−xAs‐GaAs quantum well heterostructure ring laser diodes
Kish F.A., Caracci S.J., Maranowski S.A., Holonyak N., Smith S.C., Burnham R.D.
Applied Physics Letters , 1992
170.
Self‐aligned native‐oxide ridge‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure laser arrays
Burton R.S., Schlesinger T.E., Holmgren D.J., Smith S.C., Burnham R.D.
Applied Physics Letters , 1992